摘要
采用SiGe异质结结构提高pnp晶体管的性能,重点研究了Ge组分在基区的三角形分布对晶体管电流增益β和特征频率fT的影响。三角形分布,又分为起点为零和不为零两种情况。同时为了消除集电结处SiGe异质结的价带势垒对空穴输运的影响,Ge组分向集电区延伸进一步提高了晶体管的性能。得到最大电流增益β可达150和特征频率fT可达15 GHz的pnp SiGe HBT,可以广泛地应用到通信、微波和射频领域。
SiGe heterojunction structure improves the performance of pnp bipolar, and the main points were on the effect of the Ge componant distributing in the shape of triangle in base to the current gain β and fτ. The distributing in the shape of triangle includes zero-beginning and not zero-beginning. Ge extend to collection region, to eliminate the effect of the valence band barrage in collection junction, more improving the performance of the bipolar. The best β and fτ of pnp SiGe HBT are 150 and 15G Hz , and the bipolar can be used in communication,microwave and RF field widely.
出处
《电子器件》
EI
CAS
2006年第3期635-638,共4页
Chinese Journal of Electron Devices
基金
国家模拟集成电路重点实验室基金资助(JS09.2.1.DZ01.)
国家部委预先研究项目资助(41308060108)
