摘要
基于器件结构特点和电学特性,研究了影响SiGe HBT(异质结双极晶体管)直流电流增益的主要因素,分析了不同的电流密度条件下,器件的物理参数、结构参数与集电极电流密度和中性基区复合电流的关系,建立了SiGe HBT集电极电流密度,空穴反注入电流密度、中性基区复合电流、SRH(Shockley-Read-Hall)复合电流密度、俄歇复合电流密度以及直流电流增益模型,对直流电流增益模型进行了模拟仿真,分析了器件物理、结构参数以及复合电流与直流电流增益的关系,得到了SiGe HBT直流电流增益特性的优化理论依据。
Based on the device structure characteristics and electrical characteristics,the main factors which affect the direct current gain of SiGe HBT were studied,and the relationships between the physical and structural parameters of devices,and collector current density and neutral base region recombination current were analyzed under different conditions of current density.The SiGe HBT collector current density,injected hole current density,neutral base region recombination current,SRH（Shockley-Read-Hall）recombination current density,Auger recombination current density and the model of direct current gain model were established respectively,and the direct current gain model was simulated.The relationship between the physical and structural parameters of devices and the recombination current and the direct current gain was discussed.Finally,the theoretical basis for optimization of SiGe HBT direct current gain characteristics was obtained.
出处
《电子器件》
CAS
2010年第4期451-455,共5页
Chinese Journal of Electron Devices
关键词
SIGE
HBT
直流电流增益
集电极电流
复合电流
SiGe HBT（Heterojunction Bipolar Transistor）
direct current gain
collector current
recombination current
