摘要
设计了一种基于SOI衬底且由新型磁敏晶体管组成的磁敏测量电路。理论分析了n+-π-n+晶体管基区长度大于载流子有效扩散长度Leff时的磁灵敏度。该磁敏晶体管可应用于磁场的测量,实验结果表明在磁场B=0.1T时,这种新型结构给出高的磁灵敏度即△Ic/Ic0≈20%,并且有很好的电控制特性。该磁敏晶体管的槽形复合区采用MEMS技术制造。
A new magneto-measurement circuit of magneto- transistor formed on a SOI Substrate is deigned. A theoretical evaluation of the magnetic sensitivity with base length of n^＋-π-n^＋ transistor is larger than the effective diffusion length Leff of carriers, one application of the magneto- transistor is the measurement of magnetic field strength. The results show that at B=0. 1T, the new type structure gives a high magnetic - sensitivity △Ic/Ic≈20% and a good electrical control of the transistor. The recombination region groove of magnetic-sensitive transistor was fabricated using the MEMS technology.
出处
《电子器件》
EI
CAS
2006年第3期609-612,共4页
Chinese Journal of Electron Devices
基金
ThisworkwassupportedbyNationalNaturalScienceFoundationofChina(6007627)
关键词
双注入
磁敏晶体管
SOI衬底
磁场测量
MEMS
Double Injection, Magneto-transistor
（SOI）substmte, Measurment of magnetic field
MEMS
