摘要
研究了Ａｒ离子激光器与硅各向异性腐蚀技术相结合制造硅杯的方法。结果表明，激光照射能增强浸于ＫＯＨ溶液中硅的化学腐蚀速率，在入射光强为４．６Ｗ，ＫＯＨ溶液浓度为０．２２ｍｏｌ，温度为９０℃的条件下，得到＜１００＞硅的腐蚀速率为２１μｍ／ｍｉｎ，是无激光照射时硅各向异性腐蚀速率的多倍。进而讨论了硅在ＫＯＨ溶液中腐蚀速率对激光光强的依赖关系以及实验温度对腐蚀速率的影响问题。
In this paper, a method of producing Si-cup by using Si anisotropic etching technique combined with an argon laser is discussed. We have used a focused laser beam to perform the localized etching on the <100> Si. The results from the experiment show that laser irradiation can enhance etching removal rates of Si in KOH. An averaged instantaneous etching rate as high as 21 μm/min has been observed in silicon for a 3 W input laser power. The chemical etching rates dependence on the laser power and on the temperature are further studied.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1995年第3期202-204,共3页
Chinese Journal of Lasers
关键词
硅
各向异性
腐蚀
氩离子激光
laser enhanced etching, anisotropic etching of Si, Si-cup, microprocessing
