摘要
在(AlAs)_3(GeGe)_1(001)超晶格的LMTO-ASA能带计算的基础上,采用“冻结势方法”,计算了超晶格中各个分子层的平均键能E_和价带边E_,揭示了超晶格体内自建电场与界面电荷的关系。
On the basis of the superlattice band-structure calculations of (AlAs)3 (GeGe)3(001) with the linear-muffin-tin-obital (LMTO) method, the average band-anti-bond energy E. and the valence-band edges E. in every molecular layer of superlattice were calculated by the frozen-potential method. The internal electric fields that result from the charge separation at the interfaces in superlattices are discussed.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1993年第3期290-294,共5页
Journal of Xiamen University：Natural Science
基金
国家自然科学基金
福建省自然科学基金
