摘要
用sol—gel法在ITO玻璃衬底上制备了不同比例Nb和Co掺杂的PZT铁电薄膜，薄膜呈以（101）为首要方向的多晶结构。结果表明，Co掺杂的PZT薄膜的剩余极化强度、矫顽场强、相对介电常数和漏电流密度均大于PZT薄膜的相应值，但在掺杂x（Nb）为1％-10％内漏电流密度随着Nb掺杂比例的增加而减小，薄膜的剩余极化强度和相对介电常数也有所减小。
PZT thin films with different proportions of Nb and Co dopants were prepared on ITO glass substrates by the sol-gel method. The films were polycrystalline with （101）-preferred orientation. The results show that the Co-doped PZT films have higher Pr values, higher Ec values, larger dielectric constant εT and larger leakage current density than PZT films. But the leakage current density decreased with the increasing proportions of Nb dopants, and the Pr values and dielectric constant εT also decreased.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第8期33-35,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目(10447108)
