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掺锑Zn-Sn-O透明导电膜的制备及特性 被引量：1

THE PREPARATION AND PROPERTIES FOR ANTIMONY-DOPED Zn-Sn-O FILMS
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摘要 采用射频磁控溅射技术在7059玻璃衬底上低温制备出具有多晶结构的掺锑锌-锡-氧(Zn-Sn-O:Sb)透明 导电膜。研究了制备薄膜的结构、成分、电学和光学特性以及退火温度对薄膜性能的影响。Zn-Sn-P:Sb透明导 电膜的电阻率为1．5×10-2Ω·cm,相应载流子浓度和霍尔迁移率分别为8．0×1019cm-3,5.8cm2·v-1·s-1。薄膜的 可见光平均透过率达到了85％。 Polycrystalline Sn-Zn-O:Sb films were prepared on corning 7059 glass substrates at low-temperature by r. f. magnetron sputtering. The structure, electrical and optical properties of the deposited films have been studied with various annealing temperatures. The resistivity of the antimony-doped Sn-Zn-O film is 1.5×10-2Ω·cm, the carrier concentration is 8.0×1019cm-3 and hall mobility 5.8cm ·v-1 ·s-1 . The average transmittance in the visible region reaches 85%.
作者 黄树来 马瑾 盖凌云 姜永超 计峰 马洪磊 余旭浒
机构地区 山东大学物理与微电子学院 莱阳农学院理学院 石油大学资源与信息学院
出处 《太阳能学报》 EI CAS CSCD 北大核心 2005年第5期626-630,共5页 Acta Energiae Solaris Sinica
基金 国家自然科学基金资助项目(60276044)教育部科学技术研究重点项目资助(重点02165)
关键词 磁控溅射 Zn-Sn-O:Sb膜 光电性质 magnetron sputtering Zn-Sn-O:Sb film opto-electrical properties
分类号 TM914 [电气工程—电力电子与电力传动]
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参考文献11

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太阳能学报
2005年 第5期

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