摘要
利用射频反应性溅射沉积技术在掺Sn的In2 O3导电透明膜(ITO)衬底上制备了钙钛矿型Pb(Zr,Ti)O3(PZT)铁电薄膜 .研究了沉积参量与热处理工艺对铁电薄膜结构和性能的影响 .运用X射线衍射、X射线光电子能谱和扫描电镜等技术 ,分析了薄膜的晶体结构、表面形貌和表面元素化学状态 .测量了不同处理条件下薄膜的铁电性能 .结果表明 :在掺Sn的In2 O3导电透明膜衬底上可以得到表面无裂纹、化学计量比符合要求的PZT薄膜 ;薄膜中晶粒均匀分布 ,平均尺寸约 2 50nm ,呈四方状和三角状 ;溅射气氛中氧含量和退火温度对薄膜结构、化学计量比和铁电性能都有明显影响 .
Pb(Zr,Ti)O 3 ferroelectric thin films with perovskite structure were prepared on Sn_doped In 2O 3(ITO) substrates by r.f. reactive sputtering technique. The effects of annealing treatment and deposition parameters on the microstructure and properties of ferroelectric thin films were investigated. The crystal structure, chemical states of elements, and surface morphologies of ferroelectric thin films were characterized by XRD, XPS and SEM, respectively. The ferroelectric properties of the deposited thin films were measured. Average grain size of the Pb(Zr,Ti)O 3 ferroelectric thin film was about 250 nm, which was distributed uniformly in quadrilateral and triangle shapes. The annealing temperature and the oxygen ratio in Ar+O 2 reactive atmosphere were found to have clear effects on the ferroelectric properties of the deposited thin films.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2000年第5期407-411,共5页
Journal of The Chinese Ceramic Society
基金
甘肃省自然科学基金!资助项目 (ZP -97-0 61 )
关键词
锆钛酸铅薄膜
氧化铟
溅射沉积
ITO
铁电薄膜
lead zirconium titanium oxide
thin films
indium oxide
sputtering deposition
