摘要
简单介绍了硅片表面超薄(0.3～8nm)氧化硅厚度的XPS测量方法。方法根据XPS测得的元素硅和氧化硅的Si2p谱线强度,使用较简单的厚度分析公式计算。本文还介绍了厚度分析公式中两个关键参数(光电子衰减长度LSiO2和氧化硅纯硅体材料的Si2p电子强度比R0)的理论计算和实验测量方法。此外,文中还介绍了用XPS测量厚度的实验步骤,包括样品方位角和光电子发射角的选择以及XPS数据处理方法。使用上述XPS测量方法,目前对于超薄SiO2的厚度测量不确定度已可达到1%。
A brief introduction is made for the method of measurements for ultra-thin layers （0.3 - 8nm） of SiO2 on Si by using X-ray Photoelectron Spectroscopy （XPS）. In this method simple equations are used to calculate the thickness of oxides by measuring the intensities of the Si2p peak area in the oxide and metallic states. There are two key parameters in the equations, i.e. the attenuation length for electrons in SiO2 and Si, Lsio2., , and the ratio of intensities for bulk SiO2 and Si, Ro The methods of theoretical calculation and experimental determination of Lsio2 and RO are also intrnduced. Besides, this introduction covers the following： the experimental procedures for the XPS measurements, including the selection of the azimuthal angle and the emission angle, and the method of the XPS data processing. By using the present XPS method it is possible to make accurate measurements for uhrathln SiO2 thickness with an uncertainty of 1% .
出处
《化学通报》
CAS
CSCD
北大核心
2006年第5期393-398,共6页
Chemistry
