摘要
首次发现两种在室温下即具有电双稳态的全有机（有机-有机）络合物，分别称为MCA＋TCNQ和BBDN＋TCNQ。它们可在真空中制备成薄膜，在数伏电压的作用下，从高电阻至低电阻的跃迁时间小于100ns，因此可作为一次写入的存储器材料。根据我国目前最小刻线宽度的水平，可望在1．6cm2的SiO2平面上做出64Mb的存储器。
Two new all-organic complexes (AOC), MCA+TCNQ and BBDN+TCNQ, with electrical bistable states at room temperature have been discovered. The resistivity of these thin films prepared in vacuum can be transferred from high to low under a voltage of few volts. The transition time is only <100 ns.Therefore, these materials are both suitable for making electronic devices of write-once read-only memory (WORM). From the minimum line-width now available in this country,a 64 Mb mernory can be expected to be made on a SiO2 substrate within an area of 1. 6 cm2.
出处
《真空科学与技术》
CSCD
1995年第6期363-367,共5页
Vacuum Science and Technology
