摘要
利用STM对金属有机络合物电双稳材料Ag—TCNQ的薄膜进行电学性质的表征与改性,在针尖强电场的作用下,当电压达到某一阈值后薄膜从高阻态跃迁至低阻态,这两种高低阻态可分别定义为一个存储单元的“O”与“1”状态,在STM的常规工作模式下,测量了薄膜的电学性质的变化;考虑到在STM的常规恒流工作模式下,针尖与样品之间的隧道结是影响电学性质的表征与改性的一个不可避免的重要因素,而它并不是材料本身的属性,为此利用STM进行了针尖与样品“接触式”的测试与分析,并且与常规工作模式进行了比较。
Characterization and surface modification of electric property are carried out on the organmetallte complex Ag-TC-NQ thin film by scanning tunneling microscope(STM).The resistance of an organmetallic complex Ag-TCNQ thin film will be changed from a high resistance state to a low resistance state when the bias voltage between the tip of STM and the bottom electrode is in excess of a certain threshold voltage.The two states can be defined as"0"and"1"of a memory unit,respective-ly.Change of electric property is recorded in the conventional mode of STM.In order to avoid the effect of tunneling junction,which is not the intrinsic property of the material,between the tip and Ithe sample,a test in so-called"contact"mode of STM is carried out,and the result is compared with that in the conventional mode.
作者
严学俭
李旭
张群
王伟军
吉小松
邱伟民
华中一
Yan Xuejian;Li Xu;Zhang Qun;Wang Weijun;Ji Xiaosong;Qiu Weimin;Hua Zhongyi(Department of Material Science,Fudan University,Shanghai 200433,China)
关键词
STM
有机材料
电双稳态
表征和表面改性
STM
organic materials
electric bistable states
characterization and surface modification
