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界面电荷耐压模型:SOI高压器件纵向耐压新理论 被引量：2

Breakdown Model Based on Interface Charges:a New Theory of the Vertical Breakdown Voltage of SOI Device
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摘要 基于求解二维Po isson方程,分析了具有埋氧层界面电荷的SO I结构纵向击穿特性,提出了界面电荷耐压模型。该模型通过埋氧层界面电荷来调制硅层和埋氧层电场,获得极高击穿电压。进一步提出临界界面电荷面密度概念,给出其工程化应用的近似公式。并对文献中的不同结构SO I器件的纵向耐压进行计算。解析结果和试验结果或M ED IC I仿真结果吻合良好。 By solving the Poisson equation, a new breakdown model based on interface charges is developed in the paper. When interface charges are introduced on the upper surface of buried oxide, the profiles of electric field in buried oxide increases greatly due to the continuity of electric displacement and an ideal vertical breakdown voltage is exhibited. Furthermore, a concept of critic density of interface charges is proposed and an approximate formula for engineering application is given. Analytical results are shown in good agreement with numerical analysis and reported experimental data.
作者 郭宇锋 张波 方健 杨舰 李肇基
机构地区 南京邮电大学光电工程学院 电子科技大学IC设计中心
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2006年第1期11-15,共5页 Research & Progress of SSE
基金 国家自然科学基金(批准号:60276040) 重点实验室基金项目(编号:51439080101DZ0201)资助课题
关键词 绝缘体上硅 界面电荷 击穿电压 SOI Interface charge breakdown voltage
分类号 TN386 [电子电信—物理电子学]
  • 相关文献

参考文献14

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二级参考文献1

  • 1Lai T M L，Proc 7th Int Symp Power Semiconductor Devices and Ics，1995年，315页

共引文献4

同被引文献18

  • 1吴秀龙,陈军宁,孟坚,高珊,柯导明.SOI LDMOS晶体管耐压结构的研究[J].半导体技术,2005,30(3):27-31. 被引量：4
  • 2Zhou M J,De Bruycker A,Van Calster A. Witters J,Sehols G. Brealdown Walkout and Its Reduction High-Voltage Pldmos Transistors on Thin Epitaxial Layer[J]. Electronics Letters, July 1992,28(16) : 1537-1538.
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  • 6Guo Yufeng, Li Zhaoji, Zhang Bo. A New Two Dimensional Analytical Breakdown Model of SOI RESURF Deviees[C]// Communications, Cireuits and Systems, ICCCAS 2007:1278- 1282.
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引证文献2

二级引证文献3

固体电子学研究与进展
2006年 第1期

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