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MSM光探测器瞬态特性的二维分析及优化设计 被引量:2

Analysis and Optimization of MSM-PD′s Characteristics Using a Two Dimensional Numerical Method
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摘要 应用有限差分方法对金属-半导体-金属光探测器进行二维分析,全部数值模拟工作都是基于半导体物理的基本微分方程完成的·结合模拟结果对金属-半导体-金属光探测器的瞬态响应进行了分析,以特性分析结果为基础针对探测器的响应速度和响应率等性能指标进行了二维结构上的优化设计· A 2D finite-difference method is developed to study a Metal-Semiconductor-Metal PhotoDetector (MSM-PD). The time-domain numerical simulation is based on the Poisson equation and continuity equations for electrons and holes. The transient response of the photodector is analyzed. An optimized design of MSM-PD is given to achieve a fast response while keeping a satisfactory responsivity.
出处 《光子学报》 EI CAS CSCD 北大核心 2006年第3期347-351,共5页 Acta Photonica Sinica
基金 浙江省自然科学基金资助项目(项目编号:20044131095)
关键词 MSM光探测器 有限差分 二维分析 瞬态响应 优化设计 SI MSM photodetector Finite difference method 2D Transient response Optimization Si
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参考文献9

  • 1Cho S Y,Seo S W,Brooke M A,et al.Integrated detectors for embedded optical interconnections on electrical boards,modules,and integrated circuits.IEEE Journal of Selected Topics in Quantum Electronics,2002,8(6) :1427~ 1434
  • 2Droge E,Bottcher E H,Kollakowski St.78 Ghz distributed InGaAs MSM photodetector.Electronics Letters,1998,34(23):2241~2243
  • 3张永刚,单宏坤,周平,富小妹,潘慧珍.掺铁InP肖特基势垒增强InGaAs MSM光电探测器[J].光子学报,1995,24(3):223-225. 被引量:5
  • 4MacDonald R P,Tarr N G,Syrett B A,et al.MSM photodetector fabricated on polycrystalline silicon.IEEE Photonics Technology Letters,1999,11 (1):108~110
  • 5Yang M,Rim K,Rogers D L,et al.A high-speed,highsensitivity silicon lateral trench photodetector.IEEE Electron Device Letters ,2002,23(7):395~397
  • 6Liou L C,Nabet B.Simple analytical model of bias dependence of the photocurrent of metal-semiconductormetal photodetectors.Appled Optics,1996,35 (1):15 ~23
  • 7Sarto A W,Van Z B J.Photocurrents in a metalsemiconductor-metal photodetector.IEEE Journal of Quantum Electronics,1997,33(12):2188~2194
  • 8Kurata M.Numerical analysis for semiconductor devices.Lexington,MA:Heath,1982.10~ 126
  • 9Selberherr S.Analysis and Simulation of Semiconductor Devices.New York:Springger-Verlay,1984.8~ 148

二级参考文献4

  • 1Rao M V,E L,1992年,28卷,46页
  • 2Shi C X,IEEE T-ED,1992年,39卷,1028页
  • 3Chan W K,IEEE EDL,1989年,10卷,417页
  • 4Hong W P,IEEE t-ED,1989年,36卷,659页

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