摘要
在稳态条件下金属 -半导体 -金属 (MSM)光探测器的光电流一维模型可以通过求解电流连续方程和传输方程来建立并求解 .在这种条件下 ,器件内部的载流子分布情况和总体光电流可以得到解析解而不用数值方法求解 .本文从电流连续方程和传输方程出发详细推导了这一过程 ,并将这一结果应用于具体的 In Ga As MSM光探测器的直流等效电路模型上 。
The 1 D DC circuit level model of a metal semiconductor metal photodetector is built and presented,whose photocurrents are analysized by using the steady state continuity equations.The analytical solutions of the carrier density and the photocurrent are derived.The quantum efficiency (the number of electron hole pairs generated per incident photon) is calculated and the model is simulated by using PSPICE.The results are in good agreement with the experiment data.
基金
国家自然科学基金资助项目 (批准号 :6 9896 2 6 0
6 99370 10 )~~
关键词
MSM光探测器
直流
等效电路
metal semiconductor metal photodetector
DC
steady state
InGaAs
