摘要
本文简单介绍了利用高分辨电子显微学方法。研究CVD金刚石薄膜与硅衬底之间的界面显微结构。结果表明,金刚石可直接在硅衬底上形成局部外延生长,也可在二者之间的非晶过渡层上成核长大。对非晶层的成分及外延界面的失配缺陷进行了探讨。
High resolution electron microscopic study of the interracial structure of CVD diamond film grown on sili-con substrate has been briefly introduced. It has been shown that the diamond particles of the film can nucleate directly on the silicon substrate,at scratches of the silicon substrate,or in an intermediate amorphous layer be-tween the diamond film and the silicon substrate. Local epitaxy growth of diamond on silicon has also been ob-served and its interfacial structure was discussed based on the existence of misfit dislocation network. The ele-mental composition of the amorphous intermediate layer has also been investigated by a systematic electron ener-gy loss spectroscopic analysis by using the scanning transmission electron microscopy method.
出处
《电子显微学报》
CAS
CSCD
1996年第2期223-229,共7页
Journal of Chinese Electron Microscopy Society
关键词
电子显微学
金刚石薄膜
硅衬底
界面
diamond film interfacial structure electron microscopy
