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高分辨电子显微学的求逆问题(英文) 被引量:3

Solving the inverse problem in HREM
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摘要 本文评述了高分辨电子显微学中一种求逆问题的方法。此法的实质是把衍射晶体学融合到高分辨电子显微学中。文章阐述了显微像衬度随晶体厚度的变化 ,从而说明当晶体厚度小于临界值时 ,可以合理地把建立在运动学衍射理论基础上的衍射分析方法等引用到高分辨电子显微学中 ,使测得晶体结构和缺陷的分辨率远高于电子显微镜的点分辨本领。文章简要地介绍了方法的原理和过程 。 An approach to the solution of inverse problem in high resolution electron microscopy (HREM) is reviewed. The essential of approach is introducing the diffraction crystallography into HREM. The image contrast change with crystal thickness is illustrated to declare that applying diffraction analysis methods based on the kinematical diffraction theory to HREM is reasonable in case the crystal thickness is below a critical value. The principle and procedures are briefly introduced and examples of application on crystal structure and defect determination with the resolution much higher than the point resolution of microscope are given.
作者 李方华
出处 《电子显微学报》 CAS CSCD 北大核心 2002年第3期219-228,共10页 Journal of Chinese Electron Microscopy Society
基金 NationalNaturalScienceFoundationofChina MinistryofSciencesandTechnologyofChina (NKBRSF G19990 6460 3 )
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参考文献43

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同被引文献31

  • 1唐春艳,李方华,王蓉.用200kV高分辨电子显微镜辨认3C-SiC中的硅和碳原子[J].电子显微学报,2007,26(2):85-89. 被引量:2
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