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射频低噪声放大器电路结构设计 被引量:17

Design of radio frequency low-noise amplifier
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摘要 文中介绍三种射频LNA的电路结构。inductivedegeneratecascode结构具有很好隔离度、低噪声及高增益而普遍使用,在此基础上介绍高稳定度的LNA结构和低功耗的偏置电流复用结构。 Three kinds of circuit architecture of radio frequency low noise amplifier are introduced. Inductive- degenerate cascode architecture is widely used for its high gain, low noise figure and good isolation between input and output. Based on this circuit, a highly stable LNA structure and a bias current reuse structure to reduce power dissipation are presented.
机构地区 上海交通大学
出处 《电子测量技术》 2006年第1期1-2,共2页 Electronic Measurement Technology
关键词 射频LNA inductive-degenerate cascode结构 radio frequency LNA inductive- degenerate eascode architecture
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参考文献4

  • 1Pietro Andreani, Henrik Sjoland. Noise optimization of an inductively degenerated CMOS low noise amplifier [J]. IEEE Trans. On Circuits and Systems, 2001, 48 (9): 835-841.
  • 2Thomas H.Lee.CMOS射频集成电路设计[M].北京:电子工业出版社,2002,220—248.
  • 3Seyed Hossein Miri Lavasani, Sayfe Kiaei. A new method to stabilize high frequency high gain CMOSLNA [J]. IEEE Conference on Circuits and Systems, 2003, 982-985.
  • 4Andrew N. Karanicolas A 2. 7 - V 900 - MHz CMOS LNA and mixer [J]. IEEE Journal of Solid - state Circuits, 1998, 31 (12): 1939-1944.

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