期刊文献+

射频低噪声放大器设计与仿真 被引量:2

Simulation and Design for Low Noise Amplifier
在线阅读 下载PDF
导出
摘要 为了提高接收机接收灵敏度及通信距离,设计了一种433 MHz频段两级低噪声放大器。使用了一种在集电极串联感性反馈,使放大管处于绝对稳定状态的方法,采用等噪声圆及等功率圆进行了低噪声放大器的仿真设计,分析了放大管的稳定性、噪声系数、增益等参数。仿真及测试结果表明低噪声放大器在433 MHz频段,噪声系数<0.6 dB,输入输出驻波比<1.5,增益>26 dB,将设计的低噪声放大器应用在433 MHz通信模块中,通信距离有显著提高。 A 2-stage and 433-band low noise amplifier is designed for improving the receiving sensitivity and communication distance of the receiver. A method that series the feedback inductive at the collector is used in this paper to ensure the amplifier tube in the stable state absolutely. Combined with the noise figure circles and the power gain circles,the design of the low noise amplifier is completed and the stability, noise figures and the transmitted power are analyzed. The simulation results show that the low noise amplifier achieves a power gain of 26 dB, the noise figures 〈 0.6 dB,input and output VSWR 〈 1.5. The communication distance is improved when the low noise amplifier is used in communication module.
出处 《电视技术》 北大核心 2014年第5期81-84,88,共5页 Video Engineering
基金 河北省高等学校科学技术研究项目(Z2012126 Z2011252)
关键词 低噪声放大器 ADS 计算机仿真 LNA ADS computer simulation
  • 相关文献

参考文献7

二级参考文献23

  • 1张润曦,石春琦,崔建明,赖宗声,曹丰文.零中频UHF RFID接收机中的低噪声放大器设计(英文)[J].电子器件,2007,30(2):450-453. 被引量:3
  • 2钱国平,黄其煜.射频识别技术及其应用[J].集成电路应用,2006,23(8):36-38. 被引量:6
  • 3张润曦,石春琦,吴岳婷,赖宗声,曹丰文.UHF RFID阅读器中的堆叠式CMOS LNA设计[J].微电子学,2007,37(2):246-249. 被引量:6
  • 4Eiji Tanigchi, Kenji hoh, Noriharu Suematsu. A dual bias -feed circuit design for SiGe HBT low noise linear amplifier [J]. IEEE Transactions on Microwave Theory and Techniques, 2003, 51 (2) :414 -420.
  • 5Michael T Murphy. Applying the series feedback technique to LNA design [ J]. Microwave Journal, 1989 (14) :910-915.
  • 6Yasushi Itoh, Yoshie Horiie, et al. A V- Band, High Gain, Low - Noise, Monolithic PHEMT Amplifier Mounted on a Small Hermetically Sealed Metal Package [ J ]. IEEE Microwave and Guided Wave Letters,1995, 5(2) : 48 - 49.
  • 7邓正伟,敬守钊.S频段集总参数低噪声放大器分析与CAD设计[C]//全国微波毫米波会议论文集.深圳:中国电子学会,2005:1367-1370.
  • 8R Ludwig, P Bretchko. RF Circuit Design: Theory and Applications[ M]. Englewood. Prentice - Hall, Inc, 2000.
  • 9Ulrich L Rohde, David P Newkirk. RF/Microwave circuit design for wireless applications [ M ]. John Wiley & Sons, Inc. 2000.
  • 10MM拉德马内斯著,顾继慧,李鸣译.射频与微波电子学[M].北京:科学出版社,2006.

共引文献27

同被引文献17

  • 1景一欧,李勇,赖宗声,孙玲,景为平.基于0.18μm CMOS工艺的2.4/5.2GHz双频段LNA的设计[J].电子器件,2007,30(4):1144-1147. 被引量:2
  • 2李志群,王志功.射频集成电路与系统[M].北京:科学出版社,2008:9-18.
  • 3王宁章,周长川.2.4GHz射频低噪声放大器分析与设计[J].微计算机信息,2007,23(29):242-243. 被引量:3
  • 4KUNHIN T, YOUNGBOG P, RAINER T, et al. High frequen- cynoise characteristics of RF MOSFETs in subthreshold region [ C ]//Proc. Radio Frequency Integrated Circuits (RF1C) Symposi- um. [S. l. ] : IEEE,2003:163-166.
  • 5NGUYEN T, KIM C, IHM G, et al. CMOS low-noise amplifier de- sign optimization techniques [ J ]. IEEE Trans. Microwave Theory and Techniques, 2004, 52 (5) : 1433-1442.
  • 6LIU B, ZHOU J, MAO J. Design of 0.5 V CMOS cascode low noise amplifier for muhi-gigahertz applications[ J]. Journal of Sem- iconductors,2012,33 ( 1 ) : 1506.
  • 7RAZAVI B. RF Microelectronics [ M ]. NJ, USA : Prentice Hall PTR, 1998.
  • 8FAN X H, ZHANG H, EDGAR S. A noise reduction and linearity improvement technique for a differential cascode LNA [ J]. IEEE Journal of Solid-state Circuits ,2008, 43 (3) :588-599.
  • 9GRAY P R, MEYER R G. Analysis and design of analog integrated circuit [ M ]. 4th ed. New York : John Wiley & Sons,2001.
  • 10THOMAS H L.CMOS射频集成电路设计[M].余志平,译.北京:电子工业出版社.2006.

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部