摘要
新型锗硅材料和器件的发展开创了硅异质结构和能带工程器件的新时代.现代先进的外延技术使应变层锗硅材料的应用成为可能.本文详细评述了新型锗硅应变层异质结构双极器件的研究现状及发展,着重讨论了锗硅应变层的性质和以锗硅应变层作基区的异质结双极器件的性能及其应用前景.
The development of novel SiGe materails and devices ushered a new era of silicon heterostructures and band-engineered devices. Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible. In this paper we reviewed the research status and development of novel SiGe stained layer heterostructure devices, and focused on disscussion of the properties of those materials, the performance of heterojunction bipolar devices and the prospective applications.
出处
《电子器件》
CAS
1992年第4期215-227,共13页
Chinese Journal of Electron Devices
关键词
锗硅应变层
异质结构
双极晶体管
SiGe strained layer heterostructure, heterojunction bipolar transistor, band engineering.
