摘要
用光致发光技术研究了未掺杂半绝缘砷化镓中的深能级缺陷,观察到一系列与其有关的光致发光.其中0.69eV发射带是源自EL2的辐射复合发光,0.77eV带是由导带至As_(Ga)施主能级的跃迁.认为1.447eV和1.32eV荧光带系分别对应于与Ga_(As)的两个电子态(38meV和203meV)有关的辐射复合.
Deep level defects in undoped semi-insulating GaAs are investigated by photo-luminescence (PL) technique. Several PL emissions related to deep level defects and their behaviors have been observed. The emission band at 0.69eV is due to the well known main mid-gap level EL2 and the 0.77eV PL bands attributable to the transition from the con-duction band to the As_(Ga)donor level. It is suggested that the 1.447eV and 1.32eV PL emis-sions are caused by the double acceptors Ga_(As), with levels 78meV and 203meV above the valence band, respectively.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第1期27-36,共10页
Journal of Infrared and Millimeter Waves
基金
电子科学基金
关键词
半绝缘
砷化镓
光致发光
缺陷
photoluminescence, defects, semi-insulating GaAs
