摘要
用卤素钨灯作辐射热源快速热氮化 (RTN) 10 nm Si O2 膜 ,制备了〈10 0〉和〈111〉晶向 Si衬底上的 Si- Si Ox Ny-Al电容结构 .研究了电子从〈10 0〉和〈111〉不同晶向 N型硅积累层到 RTN后 Si O2 膜 (或原始 Si O2 膜 )的漏电流和高场 F- N隧穿电流 .研究结果表明 :经 RTN Si O2 膜比原始 Si O2 膜从低场到隧穿电场范围都明显地看到电导增强现象 .比较 RTN后两种不同晶向样品 ,低场漏电流没有多大的差别而在高场从〈10 0〉晶向比从〈111〉晶向 Si隧穿Si Ox Ny 膜的 F- N电流却明显增加 。
The Si SiO x N y Al capacitors are fabricated on both <100>and <111> oriented Si by Rapid Thermal Nitridation (RTN)10nm SiO 2 films with a tungsten halogen lamp as radiation source heating.The electron F N tunneling currents in a higher field and the leakage current in a lower field are studied,which are both from the <100> and <111> oriented N type Si accumulation layer into the RTN SiO 2 (or original SiO 2).The results show that in the lower field,the current is enhanced after the original SiO 2 rapid thermal nitrification.No difference in the leakage current can be observed in the lower field for both the orientations;while in the higher field,the F N tunneling current is markedly increased from the <100> oriented compared with that from the <111> oriented capacitors,which can be explained by using to theory model on the basis of the conservation of transverse crystal momentum.
