摘要
提出考虑到载流子侧向扩散分布以及光场模式分布精确描述具有非自建增益波导的电极条形双区共腔半导体双稳态激光器中物理过程的理论模型,从外加电极等势体出发对所涉及各种分布,不作任何人为假设,自洽地计算分析了半导体激光双稳态的静态特性和开关过程,并与现行集中均匀近似假设的计算结果进行比较,并指出其局限性。发现载流子侧向扩散分布和光场模式分布及其相互作用使激射阈值电流显著提高,双稳区宽度减小,开关时间加长。指出采用自建拆射率波导结构可明显改进双稳态性能。
A theoretical model involving the lateral carrier diffusion and laser field with modal distributionfor more accurately describing the physical process in the non-built-in gain guidedsemiconductor laser with stripe electrode and two-sec(?)ion-common-cavity is developed. Bywhich, the static bistability and switching behavior of the laser are calculated starting from theequipotential of the electrode self-consistently without any imposed-distribution, and the resultsare compared with that by the concentrated uniform approximation.It is found that the lasingthreshold current is significantly increased, the width of the bistability current range is decreased,and the switching time is increased due to the lateral carrier diffusion and the laser modalfield ditributions and as well as their interaction.It is proposed that to improve the charateristiesof semiconductor bistable laser, a structure with built-in refractive index guiding shouldbe used.
基金
国家自然科学基金
关键词
半导体激光器
双区共腔
双稳态
Semiconductor laser
Two-section-commom-cavity
Bistability
Switching behavior
