摘要
在超高真空条件下,GaAs衬底上淀积钨、硅多层夹层膜,用快速白光辐照形成单一化学相的W_5Si_3肖特基接触。其势垒高度好于0.7V。按Si/W=0.6淀积单层硅、钨膜,能观察到的硅化物相是WSi_2。文中还讨论了样品结构方式对钨硅化物生成相的影响。
A single phase W_5Si_3 schottky contact has been achieved by rapid thermal annealing. which is deposited on GaAs with multiply sandwhiched films of W and Si under UHV. The barrier height is better than 0.7V. With a single layer deposition of W and Si, only a WSi_2 phase is formed. The effects of sample preparation on the formation of W_5Si_3 are discussed.
出处
《微电子学与计算机》
CSCD
北大核心
1989年第3期45-47,共3页
Microelectronics & Computer
基金
国家自然科学基金
