摘要
采用半经验的紧束缚方法计算了与InP晶格相匹配的Ga_xIn_(1-x)P_yAs_(1-y)半导体的电子联合状态密度及介电常数虚部,并根据Kramers-Kronig关系式求得了光透明区的折射率常数.
With semi-empirical tight-binding method,the electronic joint state densities and the ima-ginal parts of dielectric functions of Ga_xIn_(1-x)P_yAs_(1-y) lattice-matched to InP have been calcula-ted.And the refractive indices in the optical transparent zone have also been obtained by useof Kramens-Kronig relation.
关键词
超晶格
异质结
紧束缚法
光学常数
Heterojunction
Superlattice
Tight-binding method
Joint state density
Interband transition
Polar phonon
