摘要
探讨了在半导体晶闸管(SCR)制造过程中,采用合理的工艺手段,选用最低电阻率的单晶、偏长的基区、阴极加短路环、短路点,使小电流α2为零,经过严格的斜边清洗与钝化,使SCR最高工作结温尽量达到理论值。
The process of manufacturing thyristor （SCR.） adopting reliable techniques and selecting the silicon which has the lowest resistivity, longer base and the cathode added the short circuit circle and the short current point, which make the small current a 2 be zero was discussesed. It can completely reach the highest operation junction temperature value in terms of theory by strict washing and passivating.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第12期57-59,共3页
Semiconductor Technology
关键词
晶闸管
结温
雪崩
短路点
thyristor
junction temperature
avalanche
point of short circuit
