摘要
采用射频磁控溅射在Pt/Ti/SiO2/Si(100)衬底上制备了钛酸锶钡(BST)薄膜,利用气氛炉对薄膜进行晶化处理,晶化后薄膜的应力采用XRD表征。研究其残余应力随晶化温度变化的趋势。结果表明:在550,650,700℃晶化后的BST薄膜宏观残余应力表现为压应力,且随着晶化温度的升高,呈线性变大。
（Ba,Sr）TiO3 （BST） thin films were prepared on Pt/Ti/SiO2/Si（100） substrates by RF-magnetron sputtering, and then were annealed in oxygen ambience at 550, 650 and 700℃, respectively. The stress change of BST thin films was analyzed by XRD. The results reveal that the residual stresses in the thin films are compressive stresses which is linear with increase of annealing temperature.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2005年第11期59-61,共3页
Electronic Components And Materials
基金
国家重点基础研究发展计划(973计划)资助项目(Z01)
关键词
无机非金属材料
钛酸锶钡薄膜
晶化
残余应力
inorganic non-metallic materials
BST thin films
post-annealing
residual stress
