摘要
探索了原子氢在各类制备条件下对纳米金刚石薄膜生长所起的作用,指出贫氢环境并不是纳米金刚石薄膜制备的必备条件,原子氢与Ar在贫氢环境和富氢环境中的作用机理不尽相同.通过施加衬底偏压能促进氢离子的产生,氢离子刻蚀sp2碳的能力比刻蚀sp3碳能力强很多,同时能产生表面缺陷,因而富原子氢环境更有利于纳米金刚石薄膜成核与生长.
The effects of atomic hydrogen on the growth of nanodiamond films were explored under different conditions of preparation. It is believed hydrogen-poor is not the necessary factor for preparation of nanodiamond films. The mechanisms of atomic hydrogen and Ar are different between the condition of hydrogen-poor and hydrogen-rich. Substrate bias fixed, can promote the production of H^＋. H^＋ can etch sp^2 carbon stronger than sp^3 carbon, and can result in surface defects. Therefore, the condition of hydrogen-rich will be assistant to the nucleation and growth of nanodiamond films.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第5期1263-1269,共7页
Journal of Inorganic Materials
基金
湖南省科技计划项目(04FJ3036)
关键词
原子氢
纳米金刚石薄膜
衬底偏压
成核
生长
atomic hydrogen
nanodiamond films
substrate bias
nucleation
growth
