摘要
用微波等离子体化学气相淀积法 (MPCVD)在Si基片上生长了金刚石薄膜 ,通过对其进行Raman光谱分析 ,一次表征了金刚石的结构、纯度及应力状况等材料性能 ,同时并研究了生长过程中微波功率与金刚石性质的关系。研究表明 ,微波等离子体化学气相淀积法生长的金刚石薄膜 ,除了金刚石成分的生长外 ,还会有部分非金刚石成分的生长 ,金刚石的纯度与微波功率的关系不明显 ,另外此种方法生长的金刚石薄膜主要表现为张应力。
Diamond thin films were deposited on silicon wafers in microwave plasma chemical vapor deposition(MPCVD). The diamond films properties such as structure, purity and stress characterized in one time by Raman spectro-analysis. And the relations between the growth parameters and the films properties are also studied. The results indicates that the diamond thin films which deposited in MPCVD method composed of not only diamond ingredient but also non-diamond ingredient, and the relations between the purity and microwave power is not obviously. And the stress in the thin film showed up in tension.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
2002年第2期251-253,共3页
Spectroscopy and Spectral Analysis
基金
国家自然科学基金资助课题 (698760 2 6)
