摘要
尽管ＧａＡｓＭＥＳＦＥＴ研制工艺已经成熟，但随着电子系统性能不断提高，对器件的要求也越来越高。本文介绍了用于改善ＧａＡｓＭＥＳＦＥＴ特性的几种新途径。
Although thr processing technology of GaAs MESFET has come to maturity,the demand for the electrical characteristics of device is more higher with the increasing properties of electronic system.This paper describes several approaches to improving the characteristics of GaAs MESFET.
出处
《半导体情报》
1996年第1期19-24,共6页
Semiconductor Information
