摘要
在ＨＦ－ＨＮＯ＿３水溶液中化学浸蚀单晶硅，得到了具有可见光致发光的多孔硅层（ＰＳＬ）．金相显微镜和扫描电镜（ＳＥＭ）观察表明，化学浸蚀后的表面呈绒面状，说明侵蚀具有各向异性。浸蚀过程中出现显色循环，当显色处于临界时间时，样品光致发光最强。与阳极氧化样品相比，化学侵蚀形成多孔硅的光致发光强度要弱近一个数量级，其峰值能量为１．９４～２．０４ｅＶ，半峰宽（ＦＷＨＭ）为０．３５～０．４１ｅＶ．还对比讨论了阳吸氧化多孔硅和化学浸蚀多孔硅的稳定性。
The formation of photoluminescent porous silicon layers(PSL) in HF- HKO_3based solution is reported,Photomicroscopy and scanning electron microscopy(SEM)reveal that the etched Si has valvet morphology.From the shape of hills on the surface varying with the orientation of Si wafer ,we can conclude jthat chemical etchin(CE)is preferential.Colour cycles appear in the etching processand while the clour cycles are at the critical time,the sample has the bnightest photoluminescence(PL).PL spectra show that the luminescent intensity of OE is near1y an order of magnitude smaller than that of PS formed by anodization.The peak energy of CE Si is from 1.94～2.04 eV,and the fullwidth at half maximum intensity(FWHM)is from 0.25～0.41 eV.The Stabilityof CE Si is discussed,as well as that of PS formed by anodization.
出处
《应用科学学报》
CAS
CSCD
1995年第4期405-412,共8页
Journal of Applied Sciences
关键词
硅
化学浸蚀
光致发光
多孔硅
silicon,chemical etching,photoluminescence.
