摘要
用射频共溅射技术和后退火工艺制备出了埋入ＳｉＯ２中的碳复合膜，在室温下测到了强的可见光致发光谱（峰位在２．２２ｅＶ）．研究了衬底温度、退火温度、薄膜厚度对发光谱的影响．通过喇曼散射谱、红外透射谱和Ｘ光衍射谱的测量，对复合膜的结构进行了探讨．
Abstract The
composite films of C and SiO 2 were fabricated by RF co sputtering technique and post
annealing treatment. Photoluminescence (PL) measurements show that strong PL spectra with a
peak located at about 2 22eV are obtained at room temperature, which strongly depend on
substrate temperature, annealing temperature, and sample thickness. By using Raman
scattering, IR transmission and XRD measurements, the structure of the composite films is
investigated.
基金
国家自然科学基金
甘肃省自然科学基金
