摘要
采用强TEA CO_2脉冲激光辐照SiH_4/H_2系统,对SiH_4激光等离子体淀积硅膜进行了研究,测量了膜淀积及膜性能随淀积条件的变化关系.同时采用光学发射光谱、光声激光偏转方法对其基本的微观和宏观动力学过程进行了研究,在此基础上初步建立了膜淀积的物理模型,计算了膜淀积速率、膜面积等,结果与实验符合得较好.
The process of film deposition by laser plasma is studied.The energy of laser,gas pres-sure and temperature of substrate dependence of deposition rate are measured.At the same timethe basic kinetic process in deposition is studied by OES and OLDI. Finally, the model of de-position is suggested based on the experiment results.
基金
国家自然科学基金
关键词
激光
等离子体
淀积
硅薄膜
动力学
Laser plasma deposition
kinetic model
Film growth
