摘要
根据理论和实验结果的分析,提出了平板式等离子体生长Si_3N_4时存在两种主要射频缺陷;一是固定正电荷中心,主要起源于Si—O和Si—Si断键;另一是负电荷中心,它是Si—H离化所致.这两种缺陷只有在一定条件下退火方可完全消除.
On the basis of experiments and theoretical analysis, the paper presents two kinds of defect as induced by high frequency in the PEOVD passivation films by using the parallel plate mode plasma equipment. One is the positively charged centre. It arises from the break of Si-O and Si-Si bands. The other one is the negatively charged centre which arises from the existence of ionogens, mainly (Si-H)Nx. Both of them can be eliminated by annealing at some proper conditions.
出处
《应用科学学报》
CAS
CSCD
1990年第3期207-212,共6页
Journal of Applied Sciences
