摘要
本文首先分析了影响pH-ISFET阈值电压的几个因素.随后给出了在不同的离子注入参数下SOS型MISFET的阈值电压(V_T)_M及对应的参比电极-溶液-pH-ISFET的阈值电压(V_T)_R和△V_T=(V_T)_R-(V_T)_M的实测值曲线.最后对结果进行了讨论.
This paper analyses theoretically several factors which determine threshold voltage of pHISFET.The experimental curves of threshold Voltage (V_T)M of SOS-MISFET, (V_T)R of corres-ponding 'Reference electrode-Electrolyte-pH-ISFET' and △V_T= (V_T)_a-(V_T)_M under differemparameters of ion implantation are presented, and the results are discussed.
关键词
PH-ISFET
离子注入
阀值电压
pH-ISFET
MISFET
Silicon-on-sapphire(SOS)
Threshold voltage
to Implantation
