摘要
本文利用共振核反应定量地确定了LPCVD氮化硅敏感膜中,氢原子浓度及其分布.我们不仅证实了在825℃温度下,淀积的氮化硅敏感膜内存在氢原子,而且敏感膜表面所存在氢原子浓度为8—16×10^(21)cm^(-3),它高于敏感膜体内,其体内的氢原子浓度为2-3×10^(21)cm^(-3),而且敏感膜表面氢原子浓度大小与膜表面的制备条件密切相关,同时我们还利用傅利叶交换红外透射吸收光谱,确定了LPCVD氨化硅敏感膜中存在Si-O(1106cm^(-1))N-H(1200cm^(-1)),Si-H(2258cm^(-1))和N-H(3349cm^(-1))的化学键配位结构.敏感膜表面氧的存在严重地影响ISFET的能斯特响应和线性范围,而敏感膜表面的Si-H,N-H和N-Si 的化学键结构存在,有利于改善pH-ISFET 的灵敏度和线性范围.
Quantitative determination of the hydrogen content and its profile in a silicon nitride sen-sitive film by the method of resonant nuclear reaction were carried out. Evidence of the presen-ce of hydrogen in LPCVD sensitive silicon nitride film at deposition temperature of 825℃,and the hydrogen content range is of 8-6×10^(21)cm^(-3) on the surface of silicon nitride depen-ding on different process.This exceeded that of 2-3×10^(21) cm^(-3) in the most interior part ofLPCVD silicon nitride, which is homogeneous.Meanwhile, we observed separate peaks for thechemical bonding configurations of Si-H and N-H bonds indicateded by the infrared absorp-tion bands Si-O(1106cm^(-1)), N-H(1200cm^(-1)) Si-H(2258cm^(-1)) and N-H(3349cm^(-1)), re-spectively.Worse Linear range of ISFET is causel by the presence of oxygen on the surfact ofsilicon nitride sensitive films.The existance of chemical bonding configuration of Si-H,N-H and N-Si on surfaces of LPCVD silicon nitride sensitive film is favorable to the pHresponse.
关键词
氮化硅膜
LPCVD
氢含量
敏感特性
Hydrogen
Impurities
Silicon Nitride
Performance
Transistors, Field Effect
Ion Sensitive
