摘要
采用旋转舟液相外延生长系统获得ＧａＰ外延片，由它制得ＣａＰ红色发光二极管，其外量子效率可高达１０％（在电流密度为１．３Ａ／ｃｍ２时）．ＧａＰ红色发光材料的最佳生长条件如下：在Ｐ型熔体内，Ｚｎ的摩尔分数为４０×１０－４，Ｇａ２Ｏ３的摩尔分数为１０×１０－３；在Ｎ型熔体内，Ｔｅ的摩尔分数为８．０×１０－５×～１０×１０－４；Ｐ型外延层厚度为５０μｍ左右．
sing a rotating boat system for liquid phase epitaxial growth the GaP epitaxy has been prepared. With the epitaxy a emitting diodes is obtained, its external quantum efficiency may actived at as high as 10% with a current density of 1.3 A/cm2. The optimum groWth conditions are in a P type fuSion Zn concentration is 0.040mol%,Ga2O3 concentration is 0.100mol%, in N type fuSion, Te concentration is 0.008￣0.010 mol%, the thi ckness of P type epitaxy is about 50μm.
出处
《复旦学报（自然科学版）》
CAS
CSCD
北大核心
1995年第1期32-36,共5页
Journal of Fudan University：Natural Science
关键词
磷化镓
发光材料
发光效率
外延生长
allium phosphide
luminescent materials, luminosity rate, epitaxial growth
