摘要
采用ＸＰＳ方法研究了ｓｏｌ－ｇｅｌ工艺制备的ＫＴＮ（ｘ＝０．３５）薄膜的成分和结构．结果表明，除了表面被碳污染外，薄膜中无残余的碳和其他杂质．其成分与原料的化学计量比相近，且沿深度均匀分布．各元素的化学状态证实薄膜系钙钛矿型ＫＴＮ结构．Ａｒ＋溅射后的ＸＰＳ谱反映Ｋ严重偏低，Ｔａ和Ｎｂ的化学状态改变，是Ａｒ＋轰击引起Ｋ择优溅射及化合物分解所致．
Epitaxial KTN (x=0.35) eletrooptic thin films were formed on (100) SrTiO3 substrates by sol-gel process.In this peper, wide and narrow scans of XPS analyses were studied on the surface of KTN thin films before and after Ar+ SPuttering for 10min. The results show that there isn't any residual carbon or other impurity element in the films, apart from some carbon contaminations coming from the residual gas in the chamber on the surface of the films. The chemical composition of the the films is in good agreement with stoichanatry. which was also demonstrated by ICP analysis results. The valence states of the ions indicated that the films are KTN of perovskite structure. XPS spetra of the films after Ar+ sputtering have many differences with those of as-deposited films. which may be attributable to the preferable sputtering of potassium atoms and some new chemical states produced during Ar+ bombardment. Besides. it was confirmed by angle angleresolution XPS analysis results that the comPOsitional depth profile is uniform and no any different chemical state was observed in the near surface region of the film.
出处
《材料研究学报》
EI
CAS
CSCD
1995年第2期158-162,共5页
Chinese Journal of Materials Research
基金
国家自然科学基金
关键词
钽铌酸钾
薄膜
X射线
光电子能谱
溶胶-凝胶法
chemical composition, valence state. XPS, sol-gel, KTN thin film. Ar￣+ sputtering
