摘要
本文研究了锶铋钛陶瓷中ＭｓＯ的掺杂效应，发现ＭｇＯ对材料的相结构和介电性能产生很大影响，随ＭｇＯ含量的增加，材料介电温度稳定性提高．作者根据Ｋ．Ｌｉｃｈｔｅｎｅｃｈｅｒ规则以及元素替代效应，讨论了ＭｇＯ相、材料体内元素替代以及电荷施受主补偿对材料缺陷机构和介电性能的影响．
he MgO-doped (Sr,Bi)TiO3 ceramics was reported and their phase structure and dielectricproperties were studies. The results show that the temperature dependence of the dielectricPermittivity was improved by doping MgO. The influence of second phase and the substitutionalelement on the defect structure and dielectric properties were discussed by the K. Lichtenecher ruleand the charge compensation mechanism.
基金
浙江省自然科学基金
浙江省八五科技项目
关键词
介电陶瓷
电荷补偿
钛酸锶铋
掺杂
氧化镁
dielectric ceramics
K. Lichtenecher rule
charge compensation mechanism
