摘要
探讨三价阳离子（Mx3+=Sb，Y，Nd，La，x=0.02～0.06）固溶于（Sr,Ca）TiO3瓷晶相中，产生缺位补偿的A缺位（VA）点缺陷结构及其介电性能关系。A缺位浓度[VA]取决于M3+的A位或B位取代情况，M3+只取代A位[（Sr,Ca）1-xMx（VA）x/2]TiO3,或M3+只取代B位[（Sr,Ca）1-x/2（VA）x/2]（Ti1-xMx）O3,产生A缺位浓度[VA]较大，对其瓷料介电性能影响较明显；M3+同时取代A和B位[（Sr,Ca）]1-x1Mx1]（Ti1-x2Mx2）O3，由于电价补偿，产生A缺位浓度[VA]较小，因而对其瓷料介电性能影响较小。
Trivalent basic ion Mx3+= Sb,Y,Nd, La, x= 0.02～0.06) in (Sr,Ca)TiO3 ceramic crystal phase produces A vacancy (VA). defect structure of vacancy compensation, which affects dielectric properties. The density of A vacancy [VA] depends on how A site and B site displaced by M3+. If M3+ replaces only A site [(Sr,Ca)1-xMx (VA)x/2]TiO3, or only B site[(Sr,Ca)1-x/2(VA)x/2], it will produces a higher density A site [VA] and has a stronger influence upon dielectric properties. If M+3 replaces A和B site [(Sr,Ca)]1-x1Mx1) (Ti1-x2Mx2)O3 a lower A site [VA] due to electrovalence compensation, and has a weaker influence upon dielectric properties.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2001年第4期3-4,6,共3页
Electronic Components And Materials
关键词
三价阳离子
固溶体
介电性能
钛酸
基瓷
缺位结构
trivalent basic ion
(Sr,Ca)TiO_3 ceramics
solid solution, density of A vacancy, dielectric properties
