摘要
研究了双离子束溅射制备铜钨薄膜时Ar+能量及低能辅助轰击对膜结构的影响。实验结果表明,以铜为衬底,铜靶Ar+能量在1～2keV、钨靶Ar+能量在3keV左右时,离子溅射铜钨薄膜是以钨的非晶态为骨架机械夹杂着铜晶粒的方式存在。铜晶粒度随铜靶Ar+能量增加略有增大。当Ar+能量高到临界值(约为1.5keV)时,少量铜转变成单晶态和熔进钨形成固溶体。受晶体缺陷及晶格畸变影响,铜衍射峰会发生微小偏移。
Based on preparation cu-w thin films with the two ion bind sputtering, the effects of Ar+ energy and low energy sputtering were investigated. The experimental result shows that non- crystal W framework exists with crystal cu in the Cu-W thin films, when Ar+ energy cu target lies in 1 - 2keV W target near 3keV. With the increase of Ar+ energy, the dimension of crystal Cu becomes bigger. When it comes to a critical point, a little changes to biggest and a little becomes the solid solution alloying with W. If low energy sputtering is used, some technical parameters must be controlled. Because of some crystal vice, Cu diffraction apex undergoes some minor excursion.
出处
《河南科技大学学报（自然科学版）》
CAS
2005年第3期1-3,共3页
Journal of Henan University of Science And Technology:Natural Science
基金
国防科研基金资助项目(MKPT-03-146)
