摘要
采用磁控溅射法制备了性能优良的以Pt为缓冲层的 [Co85Cr1 5 Pt]2 0 多层膜 ,研究了溅射气压对 [Co85Cr1 5 Pt]2 0 多层膜微结构和磁性的影响 .研究结果表明 ,Ar溅射气压对 [Co85Cr1 5 Pt]2 0 多层膜的微结构、垂直磁各向异性和矫顽力有重要的影响 .所有样品的有效各向异性常数Keff>0 ,具有垂直磁各向异性 .随着Ar气压增加 ,样品垂直膜面的矫顽力增加 ,但样品有效磁各向异性常数减小 .在 1 6PaAr溅射的Pt(2 0nm) [(Co85Cr1 5(0 5nm) Pt(1 5nm) ]2 0 多层膜 ,矫顽力达到 130kA m ,具有垂直各向异性 ,可作为垂直磁记录介质 .原子力显微镜照片显示 ,随着Ar气压增加 ,表面平均晶粒尺寸和粗糙度均增加 .这是导致多层膜的垂直矫顽力增加和有效磁各向异性常数减小的原因 .
The [Co85Cr15/Pt](20) multilayers with Pt underlayers were prepared by magnetron sputtering and the effects of sputtering gas pressure on microstructure and magnetic properties Of [Co85Cr15/Pt](20) multilayers were studied. The results show that sputtering Ar gas pressure has a great effect on the microstructure, perpendicular magnetic anisotropy and the coercivity of [Co85Cr15/Pt](20) multilayers. For all samples, we have the effective magnetic anisotropy constant K-eff > 0, and all samples showed perpendicular magnetic anisotropy. With increasing sputtering Ar gas pressure, the perpendicular and in-plane coercivity of the samples increase, but the effective magnetic anisotropy constant decreases. The coercivity of Pt(20 nm)/[( Co85Cr15 (0.5 nm)/Pt(1.5 nm)](20) multilayers sputter-depositied at 1.6 Pa Ar gas pressures is increased to 130 kA/m. The Pt(20 nm)/ [(Co85Cr15(0.5 nm)/Pt(1.5 nm)](20) multilayers display perpendicular magnetic anisotropy and can be used as perpendicular magnetic recording media. The images of atomic force microscopy show that both average grain size and the surface roughness increase with increasing sputtering Ar pressure, which leads to the enhancement of perpendicular coercivity and the decrease of effective magnetic anisotropy constant.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第4期1841-1846,共6页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :5 0 3 0 10 0 2 )
北京市科技新星计划 (批准号 :H0 2 0 82 12 90 12 0 )资助的课题~~
关键词
多层膜
垂直磁记录
磁控溅射
微结构
矫顽力
sputtering pressure
multilayers
perpendicular magnetic anisotropy
effective magnetic anisotropy constant
