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Nd:LuVO_4晶体缺陷的研究 被引量:2

Study on the Growth Defects in Nd:LuVO_4 Crystal
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摘要 采用提拉法生长的Nd:LuVO4 晶体是一种适合二极管泵浦的新型激光晶体,运用化学腐蚀结合光学显微术和同步辐射白光X射线形貌术对Nd:LuVO4 晶体缺陷进行观察,结果表明:晶体的主要缺陷为位错和小角晶界。利用高分辨X射线衍射仪进一步验证了这一结果。并初步讨论了缺陷形成的原因。 A new laser crystal Nd:LuVO4 was grown by Czochralski method. The growth defects in the Nd:LuVO4 crystals were observed by optical microscopy combined with white-beam synchrotron radiation topography. It is shown that the main growth defects in the Nd:LuVO4 crystals are dislocations and low-angle grain boundaries. The result was confirmed furthermore by high resolution X-ray diffractometry. In addition, the formation mechanisms of these defects in Nd:LuVO4 crystal were discussed.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2005年第2期238-241,共4页 Journal of Synthetic Crystals
基金 国家自然科学基金(No. 60025409)资助项目
关键词 Nd:LuVO4晶体 缺陷分析 同步辐射白光X射线形貌术 小角晶界 激光性质 化学腐蚀法 Nd:LuVO_4 crystal defect white-beam synchrotron radiation topography low-angle grain boundaries
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参考文献7

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