摘要
本文报道了Sr2+离子掺杂对GdVO4晶体生长和拉曼性能的影响。SrxGd1-xVO4晶体粉末经X射线粉末衍射分析,其结果仍属四方晶系,具有锆英石结构。实验表明,高掺杂浓度时,Sr2+离子不易取代Gd3+离子进入GdVO4晶体的晶格,易导致SrxGd1-xVO4晶体开裂和产生包裹体。XPS实验证明,SrxGd1-xVO4晶体中钒元素为+5价。同时测试了常温下SrxGd1-xVO4晶体的拉曼光谱,发现随着Sr2+离子浓度增加,在884 cm-1处的VO4反对称伸缩振动逐渐增强,表明Sr2+离子的掺入影响了GdVO4晶体的拉曼性能。
The paper reported the influence of Sr^2＋ -doped ion on crystal growth and Raman properties of GdVO4 single crystal. The powder of SrGd（1-x）VO4 crystals was measured by X-ray diffraction, which showed as-grown crystals have a zircon-type structure belonging to tetragonal system. Sr^2＋ ion substituted difficultly for Gd^3＋ when concentration is higher, which resulted in the formation of crack and inclusion in SrGd（1-x）VO4 crystals. The XPS experiments proved that the V element of SrGd（1-x）VO4 crystals remained in the pentavalent. The Raman spectra of SrGd（1-x）VO4 crystals were measured at room temperature. The results indicated that Sr^2＋ -doped ion strengthened the peak of VO4 at 884cm^-1 , and influenced the Raman properties of GdVO4 single crystal.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第4期795-799,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.60478018)资助项目
