摘要
介绍了Ｒａｍａｎ谱测试硅片微区应力的方法．用Ｒａｍａｎ谱研究了硅／硅直接键合工艺引入的应力，测试结果表明，高温键合后，硅片表面存在局部的张应力或压应力．应力值最高达７．５×１０￣３Ｎ／ｃｍ￣２．高温退火，应力略有降低．
A method of measuring the stress in silicon with the Raman spectrum isintroduced. The stress due to silicon direct bonding is studied using the spectrum.It has been shown that there exists local tensile or oompressive stress in bondedsilicon after high temperature bonding.The stress is as large as 7.5×10￣03N/cm￣2.
出处
《应用科学学报》
CAS
CSCD
1994年第3期223-226,共4页
Journal of Applied Sciences
关键词
应力
散射谱
硅
键合
silicon direct bonding, Raman spectrum, silicon stress.
