摘要
用等离子体射频辉光放电法，在低衬底温度（＜１７０℃）、小ｒｆ功率（＜６０ｍＷｃｍ２）条件下，实现了硼掺杂硅碳合金薄膜材料的微晶化。获得了暗电导率σＤ～０．２ｓｃｍ－１、光带隙宽度Ｅｏｐｔ～２．２ｅＶ的ｐ型微晶氢化硅碳合金（μＣ－Ｓｉ：Ｂ：Ｈ）薄膜。晶化的关键是Ｈ２稀释率和掺杂水平的控制。对该材料的掺杂效应、光电特性以及掺杂水平对材料结构的影响进行了详细研究。
rystallization of boron-doped silicon carbon alloy thin film materials has been prepared at low substrate temperature(M170℃)and small rf-power (<60mWcm-2) by plasma glow discharged method. A p-type microcrystallized silicon carbon alloy (μcSiC:B:H) thin films with high dark conductivity (σ￣0.2cm-1) and optical band gap Eopt ￣2.2eV were obtained. The key of crystallization is the control of H2 diluting ratio and doping level. In this paper. the results on tile detailed investigation of the doping effect, photoelectronic characteristics and the influence of doping level on the structure of these materials are reported.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1994年第4期358-362,共5页
Acta Energiae Solaris Sinica
关键词
微晶化
硅碳硼合金
薄膜
掺杂特性
microcrystallization. silicon-carbon-boron alloy, thin film.,low temperature.doping characteristics
