摘要
用大束流密度的钼金属离子注入硅，由于原子间激烈碰撞和硅片的温升而得到了性能良好的硅化钼，实验中发现，当注量均为５×１０１７ｃｍ－２时，随束流密度的增加，硅化钼生长，其电阻率明显下降，当束流密度为０．５０Ａ·ｍ－２时，方块电阻Ｒ□最小，其值为９０Ω。Ｘ衍射分析表明，当束流密度为０．２５Ａ·ｍ－２注入时，硅化钼衍射峰很小，难于辨认。当用０．５０Ａ·ｍ－２注入时，３种结构的硅化钼明显出现。对０．２５Ａ·ｍ－２注入的样品退火实验表明，随退火温度的升高Ｒ□逐渐下降，经８００℃退火，Ｒ□突然下降至９．０Ω，最小值可达到４Ω。背散射分析表明，随束流密度的增大，注入到硅中的钼的总量增加，且钼硅原子比深度分布加宽。对于增加退火温度和增大束流密度所注入样品来说，Ｘ射线衍射测量结果有差别，这表明２种注入情况下硅化钼形成规律也存在某些差别．最后讨论形成这种差异的原因。
Because of intense atomic coliision and high target temperature during implanting, the good properties of Mo silicides were obtained by using metal Mo ions implantation with large ion flux.It is found from the experiments that when the does of 5×1017cm-2 was used,the Mo silicides were formed and sheet resistance decreases with increasing of ion flux. It is indicated from X-ray diffraction analysis that if the ion flux of 0.25A·m-2 was used, the diffraction peaks of Mo silicides was too small to distinguish. When the ion flux is equal/greater 0.50A·m-2, three kinds of Mo silicides were formed.It is shown from experiments for Mo implanted with ion flux of 0.25A·m-2 and annealed silicon that the sheet resistance R□ decreases with increasing of annealing temperature, if the annealing temperature of 800℃ was used, the R□ decreases rapidly to 9.0Ω. It is less than R□ of Mo bulk silicide.The results of X - ray analysis shown that there are several diferences in structure on electrical properties between the implanted sample with larger ion flux and implanted sample with lower ion flux them annealed at higher temperature.That is,there are differences of Mo silicides formation regularity for these two kinds of implanted samples. The RBS measurements shown that the total amount of Mo implanted silicon and distribution depth increase with increasing of ion flux. Finally,the reason of the differences appearance was discussed .
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
1994年第3期357-362,共6页
Journal of Beijing Normal University(Natural Science)
基金
国家自然科学基金
国家"八六三"高科技和北京市自然科学基金
关键词
钼离子
硅
离子注入
硅化钼
metal Mo ions
implantation into silicon
silicide
rapid thermal annealing
large ion flux
