摘要
用大束流密度的钇金属离子注入硅 ,能够直接合成性能良好的薄层硅化物。随束流密度的增加 ,硅化钇生长 ,薄层硅化物的方块电阻Rs 明显下降 ,当束流密度为 0 .5A/m2 时 ,Rs达到最小值 54Ω/□ ,说明连续的硅化物已经形成。X衍射分析表明 ,注入层中形成了二种硅化钇YSi和YSi2 。透射电子显微镜观察表明 ,当束流密度为 0 .5A/m2 时 ,连续硅化钇薄层已经形成 ,硅化钇薄层厚度为 80nm ,但是在硅化钇层下有高密度损伤层 ,增大束流密度注入 ,连续硅化钇薄层起皱 ,说明为改善硅化钇层质量 ,不能依靠加大束流密度 ,而必须要退火。经过10 50℃退火 6 0s后 ,Rs 下降至 14Ω/□ ,电阻率可小到 0 .56 μΩ·cm ,说明硅化钇薄层质量得到了进一步的改善。
The good properties of Y silicides were synthesized by using metal Y ion implantation with large ion flux and annealing.It was found that the Y silicides grown up and sheet resistance R s decreased with increasing of annealing temperature and time.The R s minimum of 59Ω/□ was obtained when the ion flux of 0.5A/m 2 was used,it was indicated that continuous layer of Y silicides were formed.X-ray diffraction analysis showed that two kinds of Y silicides of YSi and YSi 2 were formed in Y implanted silicon.It can be seen from TEM observation that depth of continuous layer of Y silicides is about 80nm,however there are two layers with high density of damage and defects under the silicide layer.The quality of the silicides was improved further after annealing,if the sample was annealed at 1050℃ for 20s,the R s decreased to 15Ω/□,the resistivity was 0.56μΩ·cm.The thermal stability of the Y silicides is very good.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2000年第B05期62-64,共3页
Journal of Functional Materials
基金
国家自然科学基金! ( 59671 0 51 )
863计划资助项目
关键词
钇离子注入
硅化钇合成
大束流密度
Y ion
implantation
yttrium silicide synthesis
high ion flux
