摘要
本文设计并研制出在液氮温度（７７Ｋ）下，ｈＦＥ≈３００；在１０Ｋ下，ｈＦＥ＝２１．７的高性能硅双极晶体管，此值优于文献报导的水平［７］．测量了该器件在７７Ｋ的ＩＣ，ＩＢ－ＶＢＥ特性和ｈＦＥ－１／Ｔ特性，并对这些曲线的解释进行了新的理论探讨。
The silicon bipolar transistors with hFE≈300 at 77K and hFE=21.7 at 10K (this value is better than that reported in reference[7]have been designed and fabricated. The IC, IB-VBE characteristics at 77K and hFE-1/T characteristics of the devices have been measured and an explorative explanation on them has been given by a new idea.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1994年第8期30-35,共6页
Acta Electronica Sinica
关键词
低温
晶体管
硅双极晶体管
Low temperature transistors
Silicon bipolar transistors
