摘要
介绍了硅中氢杂质的基本性质 ,氢杂质和氧原子的作用 ,以及氢原子对其它杂质和缺陷电学性能的影响 ,同时指出了目前研究中有待解决的问题。
The basic nature of hydrogen in silicon,the interaction of hydrogen and oxygen,as well as the effects of hydrogen on the electrical properties of other impurities and defects are overviewed in this paper.In addition,the problems on the hydrogen in silicon to be solved are pointed out.
出处
《半导体情报》
2000年第6期46-49,54,共5页
Semiconductor Information
基金
国家自然科学基金资助项目! (6 9976 0 2 5 )
关键词
缺陷电学性能
氢杂质
硅
impurity
defect
oxygen-precipitation
complex
