摘要
从基本半导体方程出发,用奇异摄动方法建立了适用于终端结构模拟的数学模型,然后,采用上、下解方法对牦尽层边界给出了一个先验估计,克服了迭代计算耗尽层边界时,由于初值选得过大或过小造成的电场、电位围绕期望值波动的现象。最后,给出了一个数值例子。
An iterative calculation of any numerical methods for the boundary of a depletion region is necessary in order to find the points where the electric field is the strongest, but the program for iterative processing is difficult. In this paper, a set of mathematical models applicable to terminal structure simulation are deve-loped on the base of the basic semiconductor equations. The super-solution and in-ferior solution method is presented. A prior-estimation of the boundary of a depletion region is obtained, which overcomes the instability problems for selecting big-ger or smaller initial-value in iteration processing.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第1期25-29,共5页
Research & Progress of SSE
关键词
终端
结构
上解
MOS器件
Junction Termination Structure (JTS), Super-Solution
